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PDF EMF44P02P Data sheet ( Hoja de datos )
| Número de pieza | EMF44P02P | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMF44P02P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
44mΩ
ID
‐5.5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
385°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/11/13
EMF44P02P
LIMITS
±12
‐5.5
‐4.2
‐22
1.47
0.94
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
18
85
UNIT
°C / W
p.1
1 page  
EMF44P02P
Gate Threshold Voltage v.s. Junction Temperature
1.5
1.25
1.0
0.75
Single Pulse Maximum Power Dissipation
40
Single Pulse
Rθ J A = 85°C/W
TA = 25°C
30
20
0.50
0.25
0
‐50
0 50
100 150
TJ ‐ Junction Temperature (°C)
Maximum Safe Operating Area
100
10
0
0.0001
0.001 0.01
0.1
t 1 ,Time ( SEC )
1
10
100
10 R D S (O N ) Limit
100μs
1ms
1
10ms
100ms
1s
10s
DC
0.1
VG S = ‐4.5V
Single Pulse
R J A = 85°C/W
TA = 25°C
0.01
0.1 1 10 100
‐VD S ‐ Drain‐Source Voltage( V )
1
Transient Thermal Response Curve
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Rθ J A (t)= r(t) *RθJA
Rθ JA = 85 °C/W
SINGLE PULSE
P(pk)
t1
t2
Tj ‐ TA = P * Rθ J A (t)
0.001
Duty Cycle,D= t1 / t2
0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , Time( ms )
2013/11/13
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMF44P02P.PDF ] | |
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