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PDF EMD06N06H Data sheet ( Hoja de datos )
| Número de pieza | EMD06N06H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
6mΩ
ID 68A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD06N06H
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=68A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
68
40
170
68
230
115
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=25A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient4
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3Pulsed drain current rating is package limited.
450°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2015/3/24
p.1
1 page  
EMD06N06H
10
Gate Charge Characteristics
I D = 30A
VD S = 15V
8
30V
6
4
4000
3000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
2000
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
1000
0
0
Coss
Crss
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a xim u m S a fe O p e ra tin g A re a
100
R
d
s
( o n
)
L
im
it
10
1 0 μ s
1m s 100 μs
D
10
C
10m
0ms
s
1 V G S = 1 0 V
SIN G LE P U LSE
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10
V D S , D r a i n ‐ S o u r c e V o lt a g e ( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
Transient Therm al Response Curve
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y cle ,D =
t1
t2
2 .Rθ J C =2 .5 °C /W
3 .TJ ‐ TC = P * R θ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2015/3/24
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD06N06H.PDF ] | |
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