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SyncMOS - 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY

Numéro de référence S29C51002T
Description 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY
Fabricant SyncMOS 
Logo SyncMOS 





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S29C51002T fiche technique
SyncMOS Technologies Inc.
S29C51002T/S29C51002B
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Features
s 256Kx8-bit Organization
s Address Access Time: 70, 90, 120, 150 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 16KB Boot Block (lockable)
s 512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 35ms (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100mA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.5V
s Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in one versions
– S29C51002T (Top Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
TheS29C51002T/S29C51002B is a high speed
262,144 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The S29C51002T/S29C51002B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O7 or by the Toggle Bit I/O6.
The S29C51002T/S29C51002B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (S29C51002T) or the bottom (S29C51002B).
All inputs and outputs are CMOS and TTL
compatible.
The S29C51002T/S29C51002B is ideal for
applications that require updatable code and data
storage.
S29C51002T/S29C51002B V1.0 May 2002
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