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What is EMB12N04G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB12N04G Datasheet PDF - Excelliance MOS

Part Number EMB12N04G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB12N04G download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMB12N04G datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary:   
BVDSS 
40V 
D
RDSON (MAX.) 
12mΩ 
ID  12A  G
 
 S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
 
 
2015/5/8 
EMB12N04G
LIMITS 
±20 
12 
10 
48 
2.5 
1.6 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
25 
50 
UNIT 
°C / W 
p.1 

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EMB12N04G equivalent
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
  EMB12N04G
10
I D  = 9A
8
6
Gate Charge Characteristics
VD  S   = 15V 20V
4
2
0
0 8 16 24
Q g  ‐ Gate Charge( nC )
32
Maximum Safe Operating Area
100
R D S  (O  N  ) Limit
10
100μs
1ms
10ms
100ms
1 1s
10s
DC
0.1
VG  S = 10V
Single Pulse
R  J  A = 50°C/W
TA   = 25°C
0.01
0.1
1 10
VD  S  ‐ DrainSource Voltage( V )
100
1600
1200
800
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
Ciss
400
0
0
Coss
Crss
10 20 30
VD  S ‐ DrainSource Voltage( V )
40
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 50°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 4
10 3
10 2
10 1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A = 50°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
10 100
1000
2015/5/8 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB12N04G electronic component.


Information Total 5 Pages
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