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Numéro de référence | EMD04N04E | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
4mΩ
ID
155A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD04N04E
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=80A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
155
110
540
80
320
160
227
73
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=20V, L=0.1mH, VG=10V, IL=50A, Rated VDS=40V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
0.55
62.5
°C / W
2014/11/17
p.1
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Pages | Pages 6 | ||
Télécharger | [ EMD04N04E ] |
No | Description détaillée | Fabricant |
EMD04N04E | Field Effect Transistor | Excelliance MOS |
EMD04N04H | Field Effect Transistor | Excelliance MOS |
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