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PDF EMD08N06A Data sheet ( Hoja de datos )
| Número de pieza | EMD08N06A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
8mΩ
ID 60A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD08N06A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=60A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
60
35
170
60
180
90
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3Pulsed drain current rating is package limited.
2.5
°C / W
75
2014/8/15
p.1
1 page  
EMD08N06A
10
Gate Charge Characteristics
I D = 20A
8
VD S = 15V 30V
6
4000
3000 Ciss
2000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
4
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
1000 Coss
Crss
0
0
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a x im u m S a fe O p e ra tin g A re a
100
R
d
s
(o n
)
L
im
it
10
1 0 μ s
1m s 100 μs
D
1
C
0
10m
0ms
s
1 V G S = 1 0 V
S IN G LE P U LS E
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10
V D S , D r a i n ‐ S o u r c e V o lt a g e ( V )
100
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J C = 2.5° C/W
TC = 25° C
0.1 1 10 100
Single Pulse Time(SEC)
1000
1
T ra n sie n t T h e rm a l R e spo n se C urve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e (sec)
1.Duty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 ° C / W
3.TJ ‐ T C = P * R θ J C (t)
4 .Rθ J C (t)=r(t) * RθJC
100
1000
2014/8/15
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD08N06A.PDF ] | |
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