|
|
Número de pieza | EMB08N06A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB08N06A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
8mΩ
ID 60A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB08N06A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=60A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
60
35
170
60
180
90
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3Pulsed drain current rating is package limited.
2.5
°C / W
75
2015/7/15
p.1
1 page Gate Charge Characteristics
10
I D = 40A
8
VD S = 15V 30V
6
4
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
EMB08N06A
4000
3000
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
2000
1000
0
0
Coss
Crss
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a xim u m S a fe O p e ra tin g A re a
1 0 0
R
d
s
(o n
)
L
i
m
i
t
10
1 0μ s
1m s 100 μ s
D
1
C
0
10m
0ms
s
Single Pulse Maximum Power Dissipation
3000
RSθi n JC g =le 2 P.5u° Cls/eW
TC = 25° C
2500
2000
1500
1000
1 V G S = 1 0 V
S IN G LE P U LS E
R θ J C = 2 . 5 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10
V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
100
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
※Note :
1. RθJC(t)=2.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
10‐2
single pulse
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100
t1,Time( sec )
101
2015/7/15
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB08N06A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB08N06A | Field Effect Transistor | Excelliance MOS |
EMB08N06H | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |