|
|
PDF EME07N02A Data sheet ( Hoja de datos )
| Número de pieza | EME07N02A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EME07N02A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
15V
D
RDSON (MAX.)
7mΩ
ID 65A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EME07N02A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=35A, RG=25Ω
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±8
65
41
160
35
61.25
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=20A, Rated VDS=15V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
375°C / W when mounted on a 1 in2 pad of 2 oz copper.
2016/2/25
2.5
°C / W
75
p.1
1 page  
Gate‐Charge Characteristics
5
ID = 18A
4
3
2
VDS= 5V 10V
1
0
0 4 8 12 16 20 24 28
Qg, Gate Charge ( nC )
3000
2500
2000
1500
1000
500
0
0
EME07N02A
Capacitance Characteristics
Ciss
f =1MHz
VGS=0 V
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
300
100 R d s ( o n ) Limit
10
Maximum Safe Operating Area
10μ s
100μ s
1ms
D1C0100mmss
Single Pulse Maximum Power Dissipation
300 Single Pulse
Rθ J C = 2.5° C/W
TC = 25° C
250
200
150
1
VG S = 4.5V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25° C
0.5
0.5 1
10
VD S ,Drain‐Source Voltage( V )
100
50
50
0
0.01 0.1 1 10 100 1000
Single Pulse Time( mSEC )
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,T im e (m S E C )
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 2.5°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
1000
2016/2/25
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EME07N02A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EME07N02A | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |