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Número de pieza | EMB06N06A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB06N06A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
5.2mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N06A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=75A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
80
50
170
75
281
140
56
22
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3Pulsed drain current rating is package limited.
2.2
°C / W
50
2016/4/22
p.1
1 page 10
Gate Charge Characteristics
I D = 30A
8
VD S = 15V
30V
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
EMB06N06A
6000
4500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
3000
1500
0
0
Coss
Crss
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a x im u m S a fe O p e ra tin g A re a
100
R d s( o n ) L im it
10
1 0μ s
1m s 100 μ s
D
10
C
10m
0ms
s
1 V G S = 1 0 V
S IN G LE P U LS E
R θ J C = 2 . 2 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10
V D S , D r a i n ‐ S o u r c e V o lt a g e ( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSTθIC N J= C G= 2 L25E°. 2CP° UC/LWSE
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
Transient Therm al Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
1 0‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y c le ,D =
t1
t2
2 .Rθ J C = 2 .2 °C /W
3 .TJ ‐ TC = P * Rθ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2016/4/22
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB06N06A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB06N06A | Field Effect Transistor | Excelliance MOS |
EMB06N06CS | Field Effect Transistor | Excelliance MOS |
EMB06N06H | Field Effect Transistor | Excelliance MOS |
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