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Numéro de référence | EMC08N08E | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
75V
D
RDSON (MAX.)
8mΩ
ID
118A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMC08N08E
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=85A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±30
118
92
350
85
361
180
227
90
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=38V, L=0.1mH, VG=10V, IL=55A, Rated VDS=75V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
0.55
60
°C / W
2015/10/8
p.1
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Pages | Pages 6 | ||
Télécharger | [ EMC08N08E ] |
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