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RB021VA-90 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB021VA-90
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB021VA-90 fiche technique
Diodes
Schottky barrier diode
RB021VA-90
RB021VA-90
zApplications
General rectification
zFeatures
1) Small power mold type
(TUMD2)
2) Low VF
3) High reliability
zStructure
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
1.3±0.05
0.17±0.1
   0.05
zLand size figure (Unit : mm)
1.1
0.8±0.05
ROHM : TUMD2
0.6±0.2
    0.1
dot (year week factory) + day
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0
TUMD2
zStructure
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak(60Hz1cyc)
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
90
90
0.2
5
125
-40 to +125
0.9±0.08
Unit
V
V
A
A
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Min.
-
-
Typ.
-
-
Max.
0.49
900
Unit Conditions
V IF=200mA
µA VR=90V
Rev.B
1/3

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