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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB021VAM90
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB021VAM90 fiche technique
Schottky Barrier Diode
RB021VAM90
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.4±0.1
0.8±0.05
0.17±0.04
0.6±0.1
lLand Size Figure (Unit : mm)
1.1
(1)
lFeatures
1) Small mold type (TUMD2M)
2) High reliability
3) Low VF
00.1
(2)
ROHM : TUMD2M
Manufacture date and factory
TUMD2M
lStructure (1)Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.1
Φ
1.5
+0.1
-0
(2) Anode
0.25±0.05
1.53±0.03
Φ
+0.2
1.0 -0
0.9±0.08
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty0.5
90 V
Reverse Voltage
VR Direct Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Io
IFSM
Glass epoxy board mounted,
60Hz half sin Wave, resistive load, Tc=105°C Max.
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
Operating Junction Temperature
Tj
-
90
0.2
5
125
V
A
A
°C
Storage Temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=0.2A
VR=90V
Min. Typ. Max. Unit
- - 0.49 V
- - 900 mA
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.11 - Rev.A

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