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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB050L-60
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB050L-60 fiche technique
Schottky barrier diode
RB050L-60
Applications
General rectification
Dimensions (Unit : mm)
2.6±0.2
Data Sheet
Land size figure (Unit : mm)
2.0
Features
1)Small power mold type. (PMDS)
2)Low IR
3)High reliability
Construction
Silicon epitaxial planar
43
①②
1.5±0.2
0.1±0.02
    0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
Manufacture Date
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
60
60
3
Average rectified forward current (*2)
Forward current surge peak (60Hz1cyc)
Junction temperature
Io
IFSM
Tj
2
70
150
Storage temperature
Tstg 40 to 150
(*1) On the Glass epoxy substrate, half sine wave at 180° Tc=69°C MAX
(*2) On the Glass epoxy substrate, half sine wave at 180°
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF1 -
VF2 -
- 0.52
- 0.56
Reverse current
IR - - 100
Unit
V
V
A
Unit
V
V
A
A
A
°C
°C
Conditions
IF=2.0A
IF=3.0A
VR=60V
2.8MAX
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A

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