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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB068L150
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB068L150 fiche technique
Schottky Barrier Diode
RB068L150
Application
General rectification
Dimensions (Unit : mm)
2.6±0.2
Datasheet
Land size figure (Unit : mm)
2.0
Features
1) Small power mold type.(PMDS)
2) Ultra low IR
3) High reliability
99
12
1.5±0.2
0.1±0.02
    0.1
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC :SOD-106
1 2 Manufacture Date
Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.15.55±00..055
cathode
anode
0.3
2.9±0.1
4.0±0.1
φ11..5555
2.8MAX
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz1cyc) IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Mounting on epoxi board. 180°Half sine wave
Limits
150
150
2
90
150
55 to 150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min.
-
-
Typ. Max.
0.74 0.81
0.1 3.0
Unit
V
A
Conditions
IF=2.0A
VR=150V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C

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