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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB068MM-60
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB068MM-60 fiche technique
Schottky Barrier Diode
RB068MM-60
Datasheet
Application
General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±00..015
Land Size Figure (Unit : mm)
1.2
Features
1) Small power mold type
(PMDU)
2) High reliability
3) Super low IR
Construction
Silicon epitaxial planar type
PMDU
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
Taping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ11..5555±00.0.055
Structure Cathode
Anode
0.25±0.05
1.81±0.1
4.0±0.1
φ11.0.0±0.01.1
1.5MAX
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
Storage Temperature
VRM
VR
Io
IFSM
Tj
Tstg
Duty0.5
60 V
Direct Reverse Voltage
60 V
Glass epoxi mounted, 60Hz half sin Wave
resistive load, Tc=75°C max.
60Hz half sin wave,
Non-repetitive at Ta=25°C,1cycle
-
2
40
150
A
A
°C
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=2.0A
VR=60V
Min. Typ. Max. Unit
- 0.715 0.765 V
- 0.10 1.5 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C

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