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RBS2MM40A fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBS2MM40A
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBS2MM40A fiche technique
Schottky Barrier Diode
RBS2MM40A
lApplications
General rectification
lDimensions (Unit : mm)
1.6±0.1
0.1±00..015
Data Sheet
lLand Size Figure (Unit : mm)
1.2
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
PMDU
(1)Cathode
lStructure
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf 1.55±0.05
(2)Anode
0.25±0.05
1.81±0.1
4.0±0.1
φf 1.0±0.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=80ºC Max.
60Hz half sin wave, non-repetitive at
Ta=25ºC, 1cycle
Operating junction temperature (1)
Tj
-
20
2.0
25
125
V
A
A
°C
Storage temperature
Tstg
- -55 to +125 °C
Note (1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj < 1/Rth(j-a).
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Conditions
IF=2.0A
VR=20V
Min. Typ. Max. Unit
- 0.42 0.48 V
- 150 400 mA
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.03 - Rev.A

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