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PDF EMF30N02P Data sheet ( Hoja de datos )
| Número de pieza | EMF30N02P | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
30mΩ
ID 5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
385°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/8/6
EMF30N02P
LIMITS
±12
5
3.75
20
1.47
0.94
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
18
85
UNIT
°C / W
p.1
1 page  
EMF30N02P
5
G a te ‐C h a rg e C h a ra c te ristic s
ID = 5A
4
Capacitance Characteristics
450
f =1MHz
375
VGS=0 V
3
2
1
0
0
VDS= 5V
10V
2 4 6 8 10
Q g, Gate Charge ( nC )
12
300
225
150
75
0
0
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
100
M axim u m Safe O p e ratin g A re a
10 R D S ( O N ) Limit
100μs
1ms
10ms
100ms
1
1s
10s
DC
0.1
VG S = 4 .5 V
Single Pulse
R J A = 8 5 ° C / W
T A = 2 5 ° C
0.01
0.1
1 10
VD S ‐ D r a in ‐ S o u r c e V o lt a g e ( V )
100
Single Pulse M axim um Power Dissipation
50
Single Pulse
Rθ J A = 85 °C /W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Tim e ( sec )
10
100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
Transient Thermal Response Curve
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =85°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
t 1 ,Time (sec)
2015/8/6
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMF30N02P.PDF ] | |
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