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PDF EMB09N03VAT Data sheet ( Hoja de datos )
| Número de pieza | EMB09N03VAT | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9.5mΩ
ID 10A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
G D D
PIN 1
SYMBOL
EMB09N03VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
10
6.5
40
10
5
2.5
2.08
1.33
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/7/23
TYPICAL
MAXIMUM
12
60
UNIT
°C / W
p.1
1 page  
12
ID = 1 0 A
G a te C h a rg e C h a ra c te ris tic s
10
8
6
V DS =5V
15V
10V
4
10 4
10 3
10 2
EMB09N03VAT
C a p a c ita n c e C h a ra c te ristic s
C iss
C o ss
C rss
2
0
0
7 .5 1 5
Q g ,G a te C h a rg e ( n C )
2 2 .5
100
Maximum Safe Operating Area
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1
1s
10s
DC
0.1
VG S = 10V
Single Pulse
R J A = 60°C/W
T A = 25°C
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
600
500
Sin gle P u lse M a xim u m P o w e r D issip a tio n
Sin g le P u lse
Rθ J A = 6 0 ° C / W
T A = 2 5 ° C
400
300
200
100
0
0 .00 00 1 0.0 00 1
0.0 01
0 .01
t 1 , T im e ( s e c )
0 .1
1
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐5
10‐4
Transient Thermal Response Curve
10‐3
10 ‐2
10‐1
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
1 10
100
2015/7/23
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB09N03VAT.PDF ] | |
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