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What is EMB14N10F?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB14N10F Datasheet PDF - Excelliance MOS

Part Number EMB14N10F
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB14N10F download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMB14N10F datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
14.6mΩ 
ID  40A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=40A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2017/3/30
EMB14N10F
LIMITS 
±20 
40 
25 
140 
40 
80 
40 
40 
16 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
3.1 
62.5 
UNIT 
°C / W 
p.1

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EMB14N10F equivalent
  EMB14N10F
 
 
  Gate Charge Characteristics
  10
I D  = 20A
 8
  VD  S  = 25V
50V
 6
 4
 
2
 
 0
0
 
20 40 60
Q g  ‐ Gate Charge( nC )
80
6000
4500
Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
3000
1500
0
0
Coss
Crss
25 50 75
VD  S ‐ DrainSource Voltage( V )
100
 
  103
Maximum Safe Operating Area
  RDS(ON) Limited
102
 
  101
 
10μs
100μs
1ms
10ms
DC
  100
  TC=25°C
    RθJC=3.1°C/W
  Vgs=10V
  Single Pulse
  101
100
101 102
VDS, DrainSource Voltage( V )
 
  Transient Thermal Response Curve
Single Pulse Maximum Power Dissipation
600 Single Pulse
RTθC    J= C = 2 35°. C1° C/W
500
400
300
200
100
0
0.01
0.1 1 10
Single Pulse Time( sec ) 
100
1000
  100
  D=0.5
  0.2
  101 0.1
  0.05
  0.02
0.01
single pulse
  102
Note :
  1. RθJC(t)=3.1°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
 
105 104 103 102 101 100 101
  t1,Time( sec )
 
 
 
 
 
2017/3/30
p.5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB14N10F electronic component.


Information Total 5 Pages
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