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PDF EMB03K03HP Data sheet ( Hoja de datos )
| Número de pieza | EMB03K03HP | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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(Preliminary)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 7mΩ
30V
3.5mΩ
D2 / S1
ID 15A 25A
D1
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
D1 D1 D1 PIN 1
(G1)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB03K03HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20 ±20
15 25
12 18
60 100
15 25
11.25
31.25
5.62
15.62
48 100
19 40
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
RJA when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
2014/5/20
MAXIMUM
2.6 1.25
62 55
27 24
UNIT
°C / W
p.1
1 page  
Outline Drawing
D
8
e
L1
1
Dimension in mm
(Preliminary)
C
A1
Dimension A A1 b c D D2 D3 D4 E E1
Min.
0.85 0.00 0.35 0.15 4.5 2.125 0.835
Typ. 0.90 0.40 0.20 5.2 4.6 2.175 0.885 5.55 6.05
Max.
1.00 0.05 0.45 0.25 4.7 2.225 0.935
Dimension
e
L L1 L2 L3 L4 L5
F θ
Min.
0.35 0 1.375 0.2 1.3 0.575
0°
Typ. 1.27 0.45 1.475 0.3 1.4 0.675 45°
Max.
0.55 0.1 1.575 0.4 1.5 0.775 10°
Recommended minimum pads
0.5
4.8
0.77
1.27
0.5
0.635
2014/5/20
D2
b
EMB03K03HP
D3 D4
E2
2.4
2.45
2.5
E3 E4
0.40 1.125
0.45 1.175
0.50 1.225
E5
0.475
0.525
0.575
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB03K03HP.PDF ] | |
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