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Numéro de référence | EMB08K04G | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS 40V 40V
RDSON (MAX.) 17.5mΩ 8.8mΩ
ID
7.4A
10.5A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
EMB08K04G
LIMITS
Q1 Q2
±20 ±20
7.4 10.5
5.6 8.4
30 42
7.5 10.5
2.8 5.5
1.4 2.7
2
0.8
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
2015/9/7
p.1
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Pages | Pages 8 | ||
Télécharger | [ EMB08K04G ] |
No | Description détaillée | Fabricant |
EMB08K04G | Field Effect Transistor | Excelliance MOS |
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