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Numéro de référence | EMB08K04HP | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS 40V 40V
D2 / S1
RDSON (MAX.) 17mΩ 8mΩ
ID 41A 57A
D1
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
D1 D1 D1 PIN 1
(G1)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB08K04HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
Pulsed Drain Current1
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
±20 ±20
41 57
32 45
9 12
7 9.6
84 114
30 40
45 80
22.5
40
48 69
19 27
2.01
2.08
1.2 1.3
‐55 to 150
V
A
mJ
W
W
°C
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient3
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2.6 1.8
62 60 °C / W
27 25
2015/9/3
p.1
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Pages | Pages 9 | ||
Télécharger | [ EMB08K04HP ] |
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