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Numéro de référence | EMF30C02G | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
1 Page
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
20V ‐20V
30.5mΩ 100mΩ
ID
6.5A
‐4.2A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/26
ID
IDM
PD
Tj, Tstg
TYPICAL
EMF30C02G
LIMITS
N‐CH
P‐CH
±12 ±12
6.5 ‐4.2
4.5 ‐3.3
26 ‐16.8
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
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Pages | Pages 8 | ||
Télécharger | [ EMF30C02G ] |
No | Description détaillée | Fabricant |
EMF30C02G | Field Effect Transistor | Excelliance MOS |
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