|
|
Número de pieza | EMB20D03H | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB20D03H (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
30V ‐30V
RDSON (MAX.)
6.5mΩ 20mΩ
ID 26A ‐15A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=15A, RG=25Ω(N)
L = 0.1mH, ID=‐10A, RG=25Ω(P)
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
Junction‐to‐Ambient3
RJC
RJA
2014/2/14
EMB20D03H
LIMITS
N‐CH
P‐CH
±20 ±20
26 ‐15
15 ‐9
100 ‐60
25 ‐20
11.25
5
UNIT
V
A
mJ
5.6 2.5
25
10
2
1.28
‐55 to 150
W
W
°C
MAXIMUM
5
62.5
UNIT
°C / W
p.1
1 page N‐Channel
EMB20D03H
On‐Region Characteristics
100
10V 7V 6V
5V
80
VG S = 4.5V
On‐Resistance Variation with Drain Current and Gate Voltage
3
2.5
60
40
20
VG S = 4.5V
2 5V
5.5V
1.5 6V
7V
10V
1
0 0.5
0 0.5
1 1.5
2 2.5
3
0 20 40 60 80 100
VD S ,Drain‐Source Voltage( V )
I D ,Drain Current( A )
On‐Resistance Variation with Temperature On‐Resistance Variation with Gate‐Source Voltage
1.8
0.015
I D = 20A
I D = 15A
1.6 V G S = 10V
0.012
1.4
1.2
1.0
0.009
0.006
TA = 125° C
TA = 25° C
0.8
0.003
0.6
‐50
‐25
0 25 50 75 100 125 150
Tj ,Junction Temperature(°C )
0
2
468
VG S ,Gate‐Source Voltage( V )
10
100
Transfer Characteristics
Body Diode Forward Voltage Variation
with Source Current and Temperature
60
V D S = 10V
80
60
T A = ‐55 °C
25 °C
10 VG S = 0V
1
40
125 °C
0.1
TA = 125°C
25°C
0.01
‐55°C
20
0.001
0
012
0.0001
3 45
0 0.2
0.4 0.6
0.8
1.0 1.2 1.4
VG S ,Gate‐Source Voltage( V )
VS D ,Body Diode forward Voltage( V )
2014/2/14
p.5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet EMB20D03H.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB20D03H | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |