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PDF EMF50C02VA Data sheet ( Hoja de datos )
| Número de pieza | EMF50C02VA | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
20V ‐20V
45mΩ 100mΩ
ID
4.8A
‐3.4A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
365°C / W when mounted on a 1 in2 pad of 2 oz copper.
2016/2/17
ID
IDM
PD
Tj, Tstg
TYPICAL
EMF50C02VA
LIMITS
N‐CH
P‐CH
±12 ±12
4.8 ‐3.4
3.8 ‐2.7
19.2
‐13.6
1.9
1.2
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
UNIT
15 °C / W
65
p.1
1 page  
Gate‐Charge Characteristics
5
ID = 3.5A
4
3
VDS= 5V
10V
2
1
0
0 12 3 45 6
Qg, Gate Charge ( nC )
600
500
400
300
200
100
0
0
EMF50C02VA
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
100
Maximum Safe Operating Area
10 R D S ( O N ) Limit
100μs
1ms
10ms
1
100ms
1s
10s
DC
0.1 VG S = 4.5V
Single Pulse
R J A = 65°C/W
T A = 25°C
0.01
0.1
1
10
VD S ‐ Drain‐Source Voltage( V )
100
600
500
S in g le P u lse M a x im u m P o w e r D issip a tio n
S in g le P u lse
Rθ J A = 6 5 ° C / W
T A = 2 5 ° C
400
300
200
100
0
0 .0 0 0 0 1 0 .0 0 0 1
0 .0 0 1
0 .0 1
t 1 , T i m e ( s e c )
0 .1
1
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐5
10‐4
Transient Thermal Response Curve
10‐3
10 ‐2
10‐1
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A = 65°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
1 10
100
2016/2/17
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMF50C02VA.PDF ] | |
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