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PDF EMFA0B02G Data sheet ( Hoja de datos )
| Número de pieza | EMFA0B02G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
RDSON (MAX.)
100mΩ
ID ‐3A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/26
EMFA0B02G
LIMITS
±12
‐3
‐2.4
‐16
2
1.2
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
Ordering & Marking Information:
Device Name: EMFA0B02G for SOP‐8
FA0
B02
ABCDEFG
FA0B02: Device Name
ABCDEFG: Date Code
Outline Drawing
D
F
G
E
I
IH
BC
A
J
K
Dimension in mm
Dimension A B C D E F G H I J K
Min.
4.70 3.70 5.80 0.33
1.20 0.08 0.40 0.19 0.25 0∘
Typ.
1.27
Max.
5.10 4.10 6.20 0.51
1.62 0.28 0.83 0.26 0.50 8∘
2012/12/26
EMFA0B02G
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMFA0B02G.PDF ] | |
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