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Número de pieza | EMB24B03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB24B03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
24mΩ
ID ‐8A
UIS, Rg 100% Tested
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB24B03G
LIMITS
UNIT
Gate‐Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
‐8
‐6
‐32
Avalanche Current
IAS ‐12
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐8A, RG=25Ω
L = 0.05mH
EAS
EAR
3.2
1.6
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2
1.1
‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐8A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
25
62.5
°C / W
2013/1/10
p.1
1 page 10
I D = ‐ 8A
8
6
4
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
2
0
0 5 10 15 20
Q g ‐ Gate Charge( nC )
25
EMB24B03G
2000
1600
1200
800
400
0
0
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
Maximum Safe Operating Area
100
10 R D S (O N ) Limit
1
100μs
1ms
10ms
100ms
1s
0.1
VG S = ‐10V
Single Pulse
R J A = 62.5°C/W
TA = 25°C
10s
DC
0.01
0.1
1 10
‐VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 62.5°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10 100 1000
t 1 ,Time (sec)
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
0.001
10 ‐4
Single Pulse
10 ‐3
Transient Thermal Response Curve
10‐2 10‐1
1
t1 ,Time (sec)
Notes:
P DM
t1
t2 t1
1.Duty Cycle,D =
t2
2.R θ J A =62.5°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/1/10
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB24B03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB24B03G | Field Effect Transistor | Excelliance MOS |
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