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Numéro de référence | EMF70P02VA | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
70mΩ
ID
‐3.7A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
GD D
PIN 1
SYMBOL
EMF70P02VA
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
PD
Tj, Tstg
±12
‐3.7
‐2.7
‐14.8
2.08
1.33
‐55 to 150
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
12
°C / W
60
2013/11/13
p.1
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Pages | Pages 5 | ||
Télécharger | [ EMF70P02VA ] |
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