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PDF EMB80P03G Data sheet ( Hoja de datos )
| Número de pieza | EMB80P03G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
80mΩ
ID
‐3.5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/31
EMB80P03G
LIMITS
±20
‐3.5
‐3
‐14
2.5
1
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMB80P03G
10
ID = ‐ 3A
Gate Charge Characteristics
8
6
VD S = ‐ 5V
‐ 10V
‐ 15V
4
2
0
0
24 68
Q g ‐ Gate Charge( nC )
10
480
400
320
240
160
80
0
0
Capacitance Characteristics
Ciss
f = 1MHZ
VG S = 0V
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
100
Maximum Safe Operating Area
10
R D S ( O N )Limit
1
100μ s
1ms
10ms
100ms
1s
10s
DC
0.1
VG S = ‐10V
SINGLE PULSE
0.01 RTθ A J =A = 2 15°2 C5° C/W
0.1
1
10
‐VD S ,Drain‐Source Voltage( V )
50
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4 10‐3 10‐2
10 ‐1 1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2012/12/31
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB80P03G.PDF ] | |
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