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PDF EMB90P06G Data sheet ( Hoja de datos )
| Número de pieza | EMB90P06G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐60V
D
RDSON (MAX.)
90mΩ
ID ‐5A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐5A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/6/20
EMB90P06G
LIMITS
±25
‐5
‐3.5
‐20
‐5
1.25
0.625
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMB90P06G
10
Gate Charge Characteristics
I D = ‐ 5A
8
1500
1200
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
6
V D S = ‐ 15V ‐ 30V
Ciss
900
4
600
2
300
0
05
10 15
20
Q g ‐ Gate Charge( nC )
M axim um Safe Operating Area
100
Coss
0 Crss
0 15 30
‐ VD S , Drain‐Source Voltage( V )
45
60
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
TA = 25°C
10 R D S (O N )Limit
1
0.1
10uS
100uS
1mS
10mS
DC100mS
40
30
20
VG S = ‐10V
Single Pulse
R JA = 125°C/W
T A = 2 5 ° C
0.01
0.1 1
10
‐VD S ‐ D rain‐Source V oltage( V )
100
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
Transient Thermal Response Curve
0.05
0.02
0.01
0.01
Single Pulse
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
10
100 1000
t 1 ,Time (sec)
2013/6/20
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB90P06G.PDF ] | |
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