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Numéro de référence | EMB12P03A | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
12mΩ
ID
‐45A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐25A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB12P03A
LIMITS
±20
‐45
‐32
‐90
‐25
31.25
15.6
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/6/21
TYPICAL
MAXIMUM
2.5
62.5
UNIT
°C / W
p.1
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Pages | Pages 6 | ||
Télécharger | [ EMB12P03A ] |
No | Description détaillée | Fabricant |
EMB12P03A | Field Effect Transistor | Excelliance MOS |
EMB12P03G | Field Effect Transistor | Excelliance MOS |
EMB12P03H | Field Effect Transistor | Excelliance MOS |
EMB12P03V | Field Effect Transistor | Excelliance MOS |
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