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PDF EMB30P03A Data sheet ( Hoja de datos )
| Número de pieza | EMB30P03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
30mΩ
ID
‐22A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐12A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/5/22
EMB30P03A
LIMITS
±20
‐22
‐18
‐60
‐12
7.2
3.6
33
13
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.75
80
UNIT
°C / W
p.1
1 page  
10
Gate Charge Characteristics
I D = ‐15A
8
VD S = ‐5V
‐10V
6
‐15V
4
2
0
0 4 8 12 16 20
Q g ,Gate Charge( nC )
EMB30P03A
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
Ciss
f = 1MHZ
VG S = 0V
Coss
Crss
5 10 15 20 25 30
‐VD S ‐ Drain‐Source Voltage( V )
MAXIMUM SAFE OPERATING AREA
300
200
100
50
20
10
5
100μ s
1ms
10ms
2
DC
1
VG S = ‐10V
RSIθ N J C G= L3E. 7P5U °CL/SWE
Tc = 25 °C
0.5
0.5 1
10 100
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 3.75°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Time (sec)
10 100
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
Notes:
0.02
0.03
0.01
0.02
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =3.75°C/W
Single Pulse
0.01
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10‐2 10‐1
1
10 100
1000
t 1 ,Time ( mSEC )
2012/5/22
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB30P03A.PDF ] | |
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