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PDF EMB39P04A Data sheet ( Hoja de datos )
| Número de pieza | EMB39P04A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐40V
D
RDSON (MAX.)
39mΩ
ID
‐12A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/6/26
EMB39P04A
LIMITS
±20
‐12
‐8
‐48
‐10
5
2.5
30
12
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.1
80
UNIT
°C / W
p.1
1 page  
EMB39P04A
10
I D = ‐ 10A
8
6
Gate Charge Characteristics
V D S = ‐ 15V
‐ 20V
4
2
0
05
10 15
Q g ‐ Gate Charge( nC )
Maximum Safe Operating Area
300
200
100
50
20 100μ s
10
5
2
1
0.5
0.5
VG S = ‐10V
SINGLE PULSE
Rθ J C = 4.1 °C/W
Tc = 25 °C
1ms
10ms
1D0C0ms
1 10
‐VD S ,Drain‐Source Voltage( V )
20
100
1
Duty Cycle = 0.5
Effective Transient Thermal Impedance
1500
1200
900
600
300
0
0
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
Coss
Crss
10 20
30
‐ VD S , Drain‐Source Voltage( V )
40
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 4.1°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Time (sec)
10 100
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
t 1 , Pulse Width(s)
0.01
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J C =4.1°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
0.1 1
2013/6/26
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB39P04A.PDF ] | |
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