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Numéro de référence | EMB04K03HP | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
1 Page
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 9.5mΩ
30V
4.5mΩ
D2 / S1
ID 15A 25A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
D1
D1 D1 D1 PIN 1
(G1)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB04K03HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20 ±20
15 25
12 18
60 100
15 25
11.25
31.25
5.62
15.62
48 100
19 40
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
RJA when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
MAXIMUM
2.6 1.25
62 55
27 24
UNIT
°C / W
2013/11/21
p.1
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Pages | Pages 9 | ||
Télécharger | [ EMB04K03HP ] |
No | Description détaillée | Fabricant |
EMB04K03HP | Field Effect Transistor | Excelliance MOS |
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