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PDF EMB06K03HP Data sheet ( Hoja de datos )
| Número de pieza | EMB06K03HP | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB06K03HP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 9.5mΩ
30V
6.5mΩ
D2 / S1
ID 15A 22A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
D1
D1 D1 D1 PIN 1
(G1)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06K03HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20 ±20
15 22
12 16
60 88
15 22
11.25
24.2
5.62
12.1
48 100
19 40
‐55 to 150
V
A
mJ
W
°C
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
RJA when mounted on a 1 in2 pad of 2 oz copper.
2.6 1.25
62 55 °C / W
27 24
2013/11/21
p.1
1 page  
Q1 TYPICAL CHARACTERISTICS
EMB06K03HP
On‐Region Characteristics
50
10V 7V
6V
40
5V
30
VG S = 4.5V
20
10
On‐Resistance Variation with Drain Current and Gate Voltage
3
2.5
VG S = 4.5V
2
1.5
1
5V
5.5V
6V
7V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0.5
0
10
20 30
40
50
VD S ,Drain‐Source Voltage( V )
I D ,Drain Current( A )
On‐Resistance Variation with Temperature
On‐Resistance Variation with Gate‐Source Voltage
1.8 0.030
I D = 12A
VG S = 10V
1.6
I D = 6A
0.025
1.4
1.2
0.020
1.0
0.015
0.8
0.010
TA = 125° C
TA = 25° C
0.6
‐50
‐25
0 25 50 75 100 125 150
0
2
4
6
8 10
Tj ,Junction Temperature(°C )
VG S ,Gate‐Source Voltage( V )
Body Diode Forward Voltage Variation
Transfer Characteristics
25
with Source Current and Temperature
60
V D S = 10V
T A = ‐55 °C
25 °C
VG S = 0V
10
TA = 125°C
20
15
125 °C
1
0.1
25°C
10
‐55°C
0.01
5
0.001
0
012
3
VG S ,Gate‐Source Voltage( V )
4
5
0.00010
0.2
0.4
0.6
0.8
1.0 1.2 1.4
VS D ,Body Diode Forward Voltage( V )
2013/11/21
p.5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet EMB06K03HP.PDF ] | |
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