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PDF EMB09K03HP Data sheet ( Hoja de datos )
| Número de pieza | EMB09K03HP | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB09K03HP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS 30V 30V
D2 / S1
RDSON (MAX.) 15mΩ 9.5mΩ
ID 12A 15A
D1
UIS, Rg 100% Tested
D1 D1 D1 PIN 1
(G1)
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09K03HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20 ±20
12 15
9.6 12
48 60
12 15
7.2 11.25
3.6 5.62
48 69
19 27
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
RJA when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
MAXIMUM
2.6 1.8
62 60
27 25
UNIT
°C / W
2013/11/21
p.1
1 page  
Q1 TYPICAL CHARACTERISTICS
EMB09K03HP
50
On‐Region Characteristics
VG S = 10V
7V 6V
40
5V
On‐Resistance Variation with Drain Current and Gate Voltage
3
2.5
30
20
10
4.5V
VG S = 4.5V
5V
2
1.5 6V
7V
1 10V
0 0.5
01 2 3 45 6 7 8
0 10 20 30 40 50
V D S ,Drain‐Source Voltage( V )
I D ,Drain Current( A )
On‐Resistance Variation with Temperature
1.8
On‐Resistance Variation with Gate‐Source Voltage
0.030
I D = 8A
VG S = 10V
I D = 4A
1.6
0.025
1.4
0.020
1.2
1.0
0.015
TA = 125° C
0.8
0.010
TA = 25 °C
0.6 0
‐50 ‐25
0 25 50 75 100 125 150
2 4 6 8 10
Tj ,Junction Temperature(°C )
VG S ,Gate‐Source Voltage( V )
Transfer Characteristics
Body Diode Forward Voltage Variation with
Source Current and Temperature
25 60
V D S = 10V
T A = ‐55 °C
25 °C
VG S = 0V
10
TA = 125°C
20
15
10
125 °C
1
0.1
0.01
25°C
‐55°C
5
0.001
0
012
3
VG S ,Gate‐Source Voltage( V )
45
0.0001 0
0.2
0.4
0.6
0.8
1.0 1.2 1.4
VS D ,Body Diode Forward Voltage( V )
2013/11/21
p.5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet EMB09K03HP.PDF ] | |
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