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PDF EMF30N02H Data sheet ( Hoja de datos )
| Número de pieza | EMF30N02H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMF30N02H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
30mΩ
ID 10A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/5
EMF30N02H
LIMITS
±12
10
7
40
25
16
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
5
62
UNIT
°C / W
p.1
1 page  
5
ID = 5 A
G a te ‐C h a rg e C h a ra c te ristic s
4
3
2
VDS= 5V
10V
1
0
0
2 4 6 8 10
Q g, Gate Charge ( nC )
12
Maximum Safe Operating Area
100
RDS(ON) LIMIT
10
100μs
1ms
10ms
100ms
1s
1
DC
VGS =4.5V
0.1 SINGLE PULSE
RθJC=5°C/W
TC=25°C
0.01
0.1
1 10
VGS,Drain‐Source Voltage( V )
100
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
Notes:
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
1
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 5°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
t 1 ,Time (mSEC)
2012/12/5
450
375
300
225
150
75
0
0
EMF30N02H
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
Single Pulse Maximum Power Dissipation
300 Single Pulse
Rθ J C = 5° C/W
TC = 25° C
250
200
150
100
50
0
0.01
0.1 1 10
Single Pulse Time( mSEC )
100
1000
1000
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMF30N02H.PDF ] | |
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