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Numéro de référence | EMB09N03HR | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9.5mΩ
ID 50A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
50
35
140
Avalanche Current
IAS 37.5
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=37.5A, RG=25Ω
L = 0.05mH
EAS
EAR
70
15
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
50
26
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2012/3/26
p.1
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Pages | Pages 6 | ||
Télécharger | [ EMB09N03HR ] |
No | Description détaillée | Fabricant |
EMB09N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
EMB09N03HR | Field Effect Transistor | Excelliance MOS |
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