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Número de pieza | EMB20N03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB20N03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID 9.5A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=8A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB20N03G
LIMITS
±20
9.5
7.5
38
8
3.2
1.6
2.5
1.6
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/9/30
TYPICAL
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page 10
I D = 8A
8
6
Gate Charge Characteristics
VD S = 5V
10V
15V
4
2
0
0
4 8 12
Q g ‐ Gate Charge( nC )
16
Maximum Safe Operating Area
100
10 R D S ( O N ) Limit
1ms
10ms
100μs
100ms
1s
1
10s
DC
0.1
VG S = 10V
Single Pulse
R JA = 125°C/W
TA = 25°C
0.01
0.1 1
10
VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
1000
900
800
700
600
500
400
300
200
100
0
0
EMB20N03G
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20 25
VD S ‐ Drain‐Source Voltage( V )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/9/30
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB20N03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB20N03A | Field Effect Transistor | Excelliance MOS |
EMB20N03G | Field Effect Transistor | Excelliance MOS |
EMB20N03Q | Field Effect Transistor | Excelliance MOS |
EMB20N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
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