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What is EMBJ0N20Q?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMBJ0N20Q Datasheet PDF - Excelliance MOS

Part Number EMBJ0N20Q
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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No Preview Available ! EMBJ0N20Q datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
200V 
D
RDSON (MAX.) 
1Ω 
ID  1.1A  G
 
UIS, 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
 
 
 
 
2012/8/15 
EMBJ0N20Q
LIMITS 
±20 
1.1 
0.7 
4.4 
6.25 
2.5 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
20 
150 
UNIT 
°C / W 
p.1 

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EMBJ0N20Q equivalent
  EMBJ0N20Q
 
 
  Gate Charge Characteristics
10
  I D  = 0.55A
 8
 
6
 
V D  S  = 50V 100V
800
Ciss
600
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
400
 4
 
2
 
 0
0 5 10 15 20 25
Q g  ‐ Gate Charge( nC )
 
  10
Maximum Safe Operating Area
   R D  S (O  N )Limit
100μs
1ms
1
 
10ms
100ms
  1s
  0.1
DC
200
Coss
0 Crss
0
50 100 150
VD  S ‐ DrainSource Voltage( V )
200
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 150°C/W
TA  = 25°C
40
30
20
    VG  S = 10V
  Single Pulse
    R  JA  = 150°C/W
0.01   TA   = 25°C
  1 10 100 1000
VD S   ‐ DrainSource Voltage( V )
 
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
 1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.2
0.1
  0.1
0.05
  0.02
  0.01
0.01
  Single Pulse
 
  0.001
10 4
 
10 3
10 2
10 1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A = 150°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
 
 
 
 
2012/8/15 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMBJ0N20Q electronic component.


Information Total 5 Pages
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