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PDF EMB20N06E Data sheet ( Hoja de datos )
| Número de pieza | EMB20N06E | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
20mΩ
ID 60A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=40A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/10/4
EMB20N06E
LIMITS
±20
60
42
150
40
80
40
128
26
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
0.97
62.5
UNIT
°C / W
p.1
1 page  
EMB20N06E
Gate Charge Characteristics
10
I D = 20A
8
6
VD S = 15V 30V
4
4000
3000
2000
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
2
0
0
15 30
Q g ‐ Gate Charge( nC )
45
60
1000
0
0
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
103
Maximum Safe Operating Area
102 RDS(ON) Limited
101
10μs
100μs
1ms
10ms
DC
Single Pulse Maximum Power Dissipation
3000 Single Pulse
Rθ JC = 0.97° C/W
TC = 25° C
2500
2000
1500
1000
100
TC=25°C
RθJC=0.97°C/W
Vgs=10V
Single Pulse
10‐1
100
VDS, Drain‐So1u01rce Voltage( V )
102
Transient Thermal Response Curve
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
100
D=0.5
0.2
10‐1 0.1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=0.97°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2012/10/4
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB20N06E.PDF ] | |
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