|
|
Número de pieza | EMD06N10E | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD06N10E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
6.5mΩ
ID
135A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=75A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/10/8
EMD06N10E
LIMITS
±30
135
97
540
75
281
140
227
90
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
0.55
62.5
UNIT
°C / W
p.1
1 page Gate Charge Characteristics
10
I D = 75A
8
6
VD S = 50V 80V
4
EMD06N10E
10000
7500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
5000
2
0
0
50 100 150
Q g ‐ Gate Charge( nC )
200
2500
0
0
Coss
Crss
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Maximum Safe Operating Area
103
RDS(ON) Limited
102
101
10μs
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=0.55°C/W
Vgs=10V
Single Pulse
10‐1
100
101
102
VDS, Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
3000
Single Pulse
Rθ JC = 0.55 °C/W
TC = 25 °C
2500
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=0.55°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/10/8
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMD06N10E.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD06N10E | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |