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PDF EMD05N50F Data sheet ( Hoja de datos )
| Número de pieza | EMD05N50F | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMD05N50F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
1.85Ω
ID
UIS, 100% Tested
5A
G
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=5A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMD05N50F
LIMITS
±30
5
3
20
5
37.5
6.25
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/12/20
TYPICAL
MAXIMUM
2.6
62.5
UNIT
°C / W
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
18
ID = 2 .5 A
15
12
9
6
V DS =125V
250V
3
0
0 2 4 6 8 10 12 14
Q g ,G a te C h a rg e ( n C )
Maximum Safe Operating Area
100
10 R D S ( O N )Limit
1
100μs
1ms
10ms
100ms
1s
DC
0.1
VG S = 10V
Single Pulse
R JC = 2.6°C/W
TA = 25°C
0.01
1
10 100 1000
VD S ‐ Drain‐Source Voltage( V )
10000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐3
10 ‐2
10‐1 1
t 1 ,Time (sec)
10
2013/12/20
EMD05N50F
10 3
10 2
C a p a c ita n c e C h a ra c te ris tic s
C is s
C oss
10
f = 1 M H z
V GS= 0 V
C rss
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J C = 2.6°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J C (t)=r(t) + RθJC
100 1000
10000
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMD05N50F.PDF ] | |
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