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Número de pieza | EMD02N60F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD02N60F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=2A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMD02N60F
LIMITS
±30
2
1.25
8
2
6
1
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.6
60
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 1 A
15
12
V DS =150V
300V
9
6
3
0
01
2
3
4567
Q g ,G a te C h a rg e ( n C )
Maximum Safe Operating Area
100
10
R D S ( O N ) Limit
1
0.1
VG S = 10V
Single Pulse
R JC = 2.6°C/W
TA = 25°C
100μs
1ms
10ms
100ms
1s
DC
0.01
1
10 100 1000
VD S ‐ Drain‐Source Voltage( V )
10000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10‐5 10‐4 10‐3 10‐2
10‐1
t 1 ,Time (sec)
2013/12/20
EMD02N60F
1000
100
10
C a p a c ita n c e C h a ra c te ris tic s
f = 1 M H z
V GS= 0 V
C iss
C o ss
C rss
1
0 5 10 15 20 25 30
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J C = 2.6°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J C (t)=r(t) + RθJC
1 10
100
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD02N60F.PDF ] |
Número de pieza | Descripción | Fabricantes |
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