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What is EMD03N90F?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMD03N90F Datasheet PDF - Excelliance MOS

Part Number EMD03N90F
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMD03N90F download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMD03N90F datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
900V 
D
RDSON (MAX.) 
4Ω 
ID  3.5A  G
 
UIS, 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 3mH, ID=3A, RG=25Ω 
L = 0.5mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2013/12/20 
EMD03N90F
LIMITS 
±30 
3.5 
2.2 
14 
3 
13.5 
2.25 
32 
13 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
3.8 
80 
UNIT 
°C / W 
p.1 

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EMD03N90F equivalent
 
 
 
 
G a te C h a rg e C h a ra c te ris tic s
  18
ID = 1 .8 A
  15
 
12
 
9
 
 6
V DS =225V
450V
 3
 0
02
46
8 10 12 14
  Q g ,G a te C h a rg e ( n C )
  100 Maximum Safe Operating Area
 
 
 
 
 
 
 
10
R D S ( O  N  ) Limit
1
0.1
  VG S  = 10V
Single Pulse
R  J A = 80°C/W
  TA   = 25°C
100μs
1ms
10ms
100ms
1s
10s
DC
  0.01
1
 
10 100
VD  S  ‐ DrainSource Voltage( V )
1000
 
 1
Duty Cycle = 0.5
 
0.2
  0.1
0.1
  0.05
Transient Thermal Response Curve
  0.02
0.01
  0.01
Single Pulse
 
 
0.001
  10 4
10 3
10 2
10 1
1
t 1 ,Time (sec)
 
 
 
 
2013/12/20 
  EMD03N90F
1000
900
800
700
600 Ciss
500
400
300
200
Coss
100
0 Crss
10 20
Capacitance Characteristics
f  =  1MHz
V G S  = 0 V
30 40 50 60
VD  S ‐ DrainSource Voltage( V )
70
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A = 80°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMD03N90F electronic component.


Information Total 5 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMD03N90EThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMD03N90FThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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