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PDF EMB35N04CS Data sheet ( Hoja de datos )
| Número de pieza | EMB35N04CS | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
28mΩ
ID 12A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/9/3
EMB35N04CS
LIMITS
±20
12
8
48
10
5
2.5
30
12
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.1
80
UNIT
°C / W
p.1
1 page  
10
Gate Charge Characteristics
I D = 10A
8
6
VD S = 15V 20V
4
2
0
0
4 8 12
Q g ‐ Gate Charge(nC)
16
800
600
400
200
0
0
EMB35N04CS
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
300
200
MAXIMUM SAFE OPERATING AREA
100
50 R d s (o n ) Limit
20
10μ s
100μ s
10
5
2
1
VG S = 10V
RSIθ N J C G= L4E. 1P° UC/LWSE
Tc = 25 °C
0.5
1ms
10ms
100ms
DC
0.5 1
10 100
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 4.1° C/W
40 TC = 25° C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time (sec)
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J C =4.1°C/W
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
1000
2013/9/3
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB35N04CS.PDF ] | |
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