|
|
PDF EMB70N08C Data sheet ( Hoja de datos )
| Número de pieza | EMB70N08C | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB70N08C (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
65mΩ
ID 15A G
UIS, 100% Tested
Pb-Free Lead Plating & Halogen Free
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=23A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient3
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1％
TYPICAL
EMB70N08C
LIMITS
±20
15
10
60
23
27
13
39
15
-55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.2
50
UNIT
°C / W
2013/7/22
p.1
1 page  
EMB70N08C
10
ID = 15A
8
6
Gate Charge Characteristics
VDS = 20V 40V
4
2
0
03
6 9 12 15 18 21
Q g - Gate Charge( nC )
1500
1350
1200
1050
900
750
600
450
300
150
0
0
Ciss
Coss
Crss
10
Capacitance Characteristics
f = 1MHz
VGS = 0 V
20 30 40 50
VDS - Drain-Source Voltage( V )
60
100
Lim it
R DS(ON)
10
1
M a xim u m Sa fe O p e ra tin g A re a
10uS
100uS
1mS
D
10m
1C 0 0 m S
S
0.1
VGS = 10 V
S in g le P u lse
R θJC= 3 .2 ° C /W
TC = 25 °C
0 .01
1
V DS
10 100
- D rain -So u rce V o lta ge ( V )
1000
Single Pulse Maximum Power Dissipation
3000
Single Pulse
RθJC = 3.2°C/W
TC = 25°C
2500
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
※Note :
1. RθJC(t)=3.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM - TC=PDM*RθJC(t)
PDM
t1
t2
10-5 10-4 10-3 10-2 10-1 100
t1,Time( sec )
101
2013/7/22
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB70N08C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB70N08A | Field Effect Transistor | Excelliance MOS |
| EMB70N08C | Field Effect Transistor | Excelliance MOS |
| EMB70N08CS | Field Effect Transistor | Excelliance MOS |
| EMB70N08G | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |