|
|
PDF EMB70N08CS Data sheet ( Hoja de datos )
| Número de pieza | EMB70N08CS | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB70N08CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
65mΩ
ID 15A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=23A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB70N08CS
LIMITS
±20
15
10
60
23
27
13
39
15
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/7/18
TYPICAL
MAXIMUM
3.2
50
UNIT
°C / W
p.1
1 page  
EMB70N08CS
Gate Charge Characteristics
10
I D = 15A
8
6
V D S = 20V 40V
4
2
0
0 3 6 9 12 15 18 21
Q g ‐ Gate Charge( nC )
1500
1350
1200
1050
900
750
600
450
300
150
0
0
Ciss
Coss
Crss
10
Capacitance Characteristics
f = 1MHz
V G S = 0 V
20 30 40 50
VD S ‐ Drain‐Source Voltage( V )
60
M a xim u m S a fe O p e ra tin g A re a
100
R D S ( O N )Lim it
10
10uS
100uS
1mS
1
D
10m
10
C
0m
S
S
Single Pulse Maximum Power Dissipation
3000 Single Pulse
Rθ JC = 3.2 °C/W
TC = 25° C
2500
2000
1500
0.1
V G S = 1 0 V
Sin gle P u lse
R JC = 3 . 2 ° C / W
T C = 2 5 ° C
0 .0 1
1 10 100 1000
V D S ‐ D r a i n ‐ S o u r c e V o lt a g e ( V )
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=3.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2012/7/18
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB70N08CS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB70N08C | Field Effect Transistor | Excelliance MOS |
| EMB70N08CS | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |