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What is EMD05N50CS?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMD05N50CS Datasheet PDF - Excelliance MOS

Part Number EMD05N50CS
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMD05N50CS download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMD05N50CS datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
500V 
D
RDSON (MAX.) 
1.85Ω 
ID  5A 
G
 
UIS, 100% Tested 
S
PbFree Lead Plating 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 3mH, ID=5A, RG=25Ω 
L = 0.5mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
EMD05N50CS
LIMITS 
±30 
5 
3 
20 
5 
37.5 
6.25 
48 
19 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
2013/12/17 
TYPICAL 
 
 
MAXIMUM 
2.6 
62.5 
UNIT 
°C / W 
p.1 

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EMD05N50CS equivalent
 
 
 
G a te C h a rg e C h a ra c te ris tic s
  18
ID = 2 .5 A
  15
 
12
 
9
 
 6
V DS =125V
250V
 3
 
0
0 2 4 6 8 10 12 14
  Q g ,G a te C h a rg e ( n C )
 
Maximum Safe Operating Area
  100
 
 
 
 
10 R D S ( O  N )Limit
1
100μs
1ms
10ms
100ms
1s
DC
 
  0.1
  VG S  = 10V
Single Pulse
R  JC = 2.6°C/W
  TA   = 25°C
 
0.01
 1
10 100 1000
VD S   ‐ DrainSource Voltage( V )
 
10000
 
 1
Duty Cycle = 0.5
 
0.2
  0.1
0.1
  0.05
 
  0.01
0.02
0.01
Single Pulse
 
  0.001
10 3
 
10 2
Transient Thermal Response Curve
101 1
t 1 ,Time (sec)
10
 
 
 
 
2013/12/17 
  EMD05N50CS
10 3
10 2
C a p a c ita n c e  C h a ra c te ris tic s
C is s
C oss
10
f =  1  M H z
V GS= 0  V
C rss
0 5 10 15 20 25
V DS ‐D ra in S o u rc e  V o lta g e ( V  )
30
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J C = 2.6°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J C (t)=r(t) + RθJC
100 1000
10000
p.5 


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Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMD05N50CS electronic component.


Information Total 5 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMD05N50CSThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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