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PDF EMB25N06A Data sheet ( Hoja de datos )
| Número de pieza | EMB25N06A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
28mΩ
ID 30A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=30A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/10/22
EMB25N06A
LIMITS
±20
30
20
120
30
45
22.5
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
p.1
1 page  
EMB25N06A
Gate Charge Characteristics
10
I D = 20A
8
6
4
VD S = 15V
30V
2
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
2000
1500
Ciss
1000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Coss
500
Crss
0
0
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
103
Maximum Safe Operating Area
Single Pulse Maximum Power Dissipation
3000
RSθi n JC g =le 2 P.5u° Cls/eW
TC = 25° C
2500
102 RDS(ON) Limited
10μs
101
100
100μs
1ms
10ms
DC
TC=25°C
RθJC=2.5°C/W
Vgs=10V
Single Pulse
10‐1
100
VDS, Drai1n0‐1Source Voltage( V ) 102
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
※Note :
1. RθJC(t)=2.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
single pulse
10‐2
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/10/22
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB25N06A.PDF ] | |
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